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oH VE S CO AV R M AI SIO PL LA N IA BL S NT E
Features

Applications

Lead free versions available RoHS compliant (lead free version)* Bidirectional EMI filtering ESD protection > 25 k volts Protects 4 data lines
Cell phones PDAs and notebooks Digital cameras MP3 players and GPS
*R
2FAF-C10R - Integrated Passive & Active Device
General Information The 2FAF-C10R device, manufactured using Thin Film on Silicon technology, provides ESD protection and EMI filtering for the data ports of portable electronic devices such as cell phones, modems and PDAs. The device incorporates four low pass filter channels where each channel has a series 100 ohm resistor assuring a minimum of -28 dB attenuation from 800 MHz to 3 GHz. The device is suitable for EMI filtering of GSM, CDMA, W-CDMA, WLAN and Bluetooth frequencies. Each internal and external port of the four channels includes a TVS diode for ESD protection. The ESD protection provided by the component enables a data port to withstand a minimum 8 KV Contact / 15 KV Air Discharge per the ESD test method specified in IEC 61000-4-2. The device measures 1.33 mm x 2 mm and is available in a 10 bump CSP package intended to be mounted directly onto an FR4 printed circuit board. The CSP device meets typical thermal cycle and bend test specifications without the use of an underfill material.
Electrical Characteristics (@ TA = 25 C Unless Otherwise Noted) Per Line Specification Resistance Capacitance @ 2.5 V, 1 MHz Rated Standoff Voltage Breakdown Voltage @ 1 mA Forward Voltage @ 10 mA Leakage Current @ 3.3 V Filter Attenuation @ 800-3000 MHz ESD Protection: IEC 61000-4-2 Contact Discharge Air Discharge Power Dissipation per Resistor PD Symbol R C VWM VBR VF IR S21 -28 6.0 0.8 0.05 -35 0.1 Min. 80 24 Nom. 100 30 5.0 Max. 120 36 Unit -- pF V V V A dB
SOLDER BUMPS
SILICON DIE
8 15 100
kV kV mW
Thermal Characteristics (@ TA = 25 C Unless Otherwise Noted) Parameter Operating Temperature Range Storage Temperature Range Symbol TJ TSTG Min. -40 -55 Nom. +25 +25 Max. +85 +150 Unit C C
*RoHS Directive 2002/95/EC Jan 27 2003, including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
2FAF-C10R - Integrated Passive & Active Device
Mechanical Characteristics This is a silicon-based device and is packaged using chip scale packaging technology. Solder bumps, formed on the silicon die, provide the interconnect medium from die to PCB. The bumps are arranged on the die in a regular grid formation. The grid pitch is 0.5 mm and the dimensions for the packaged device are shown below.
0.3 DIA. (0.012) 0.245 - 0.255 (0.0096 - 0.0100)
A1 B2 C1
A3
C3
0.432 - 0.559 (0.017 - 0.022)
0.495 - 0.505 (0.0195 - 0.0199)
A4 B5 C4
1.981 - 2.032 (0.0780 - 0.0800)
1.285 - 1.375 (0.0506 - 0.0541)
0.330 - 0.457 (0.013 - 0.018)
0.180 - 0.280 (0.0071 - 0.0110)
A6
C6
0.180 - 0.280 (0.0071 - 0.0110) 0.430 - 0.440 (0.0169 - 0.0173) 1.285 - 1.375 (0.0506 - 0.0541) 0.430 - 0.440 (0.0169 - 0.0173)
DIMENSIONS =
MILLIMETERS (INCHES)
Reliability Data Reliability data is gathered on an ongoing basis for Bourns(R) Integrated Passive and Active Devices. "Package level" testing of the integrity of the solder joint is carried out on an independent Daisy-Chain test device. A 25-Pin Daisy Chain component is available from Bourns for this purpose (part number 2TAD-C25R). This is a 5 x 5 array featuring 0.5 mm pitch solder bumps. The Distance to Neutral Point (DNP) on that component is larger than that of the 2FAF-C10R and is thus deemed suitable for Thermal Cycle testing. "Silicon level" reliability performance is based on similarity to other integrated passive CSP devices from Bourns. Frequency Response
0 -10 -20 -30 -40 -50 -60 0.1
Loss - dB
1.0
10.0
100.0
1000.0
1000.0
Frequency - MHz
Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
2FAF-C10R - Integrated Passive & Active Device
Block Diagram The CSP device block diagram below includes the pin names and basic electrical connections associated with each channel. PCB Design and SMT Processing Please consult the "Bourns Design Guide Using CSP" for notes on PCB design and SMT Processing.
EXT1
R1: 100 ohms
INT1
How to Order
GND
2 FAF - C10R __
Thinfilm Model Chipscale No. of Solder Bumps Packaging Option R = Tape and Reel Packaged 5000 pcs. / 7 reel Terminations LF = Sn/Ag/Cu (lead free) __ = Sn/Pb
EXT2 R2: 100 ohms
INT2
EXT3
R3: 100 ohms
INT3
GND
EXT4 R4: 100 ohms
INT4
Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
2FAF-C10R - Integrated Passive & Active Device
Device Pin Out The Pin-Out for the device is shown below. Note also that the device is shown with bottom side solder pads facing up.
A
EXT1
B
C
INT1
1 2
GND
EXT2
3 4 5
INT2
Pin Out A1 A3 A4 A6 B2
Function EXT1 EXT2 EXT3 EXT4 GND
Pin Out C1 C3 C4 C6 B5
Function INT1 INT2 INT3 INT4 GND
EXT3
INT3 GND
EXT4
6
INT4
Packaging The surface mount product is packaged in an 8 mm x 4 mm Tape and Reel format per EIA-481 standard.
TOP SIDE VIEW (INTO COMPONENT POCKET) DIMENSIONS = 0.3 0.05 (.01 .002) 2.0 0.05 (.08 .002) 4.0 0.1 (.16 .004) 1.5 0.1/-0 (.06 .004/-0) DIA. MILLIMETERS (INCHES)
1.75 0.1 (.07 .004)
R
0.3 MAX. (0.01)
8.0 0.3 (.31 .01) 3.50 0.05 (.14 .002) 1.18 0.1 (0.05 0.004) 4.0 0.1 (.16 .004) R 0.25 TYP. (0.010)
0.76 0.1 (.03 .004)
1.52 0.1 (.06 .004)
ORIENTATION OF COMPONENT IN POCKET BACKSIDE FACING UP
Reliable Electronic Solutions
Asia-Pacific: TEL +886- (0)2 25624117 * FAX +886- (0)2 25624116 Europe: TEL +41-41 768 5555 * FAX +41-41 768 5510 The Americas: TEL +1-951 781-5492 * FAX +1-951 781-5700
www.bourns.com
COPYRIGHT(c) 2005, BOURNS, INC. LITHO IN U.S.A. 08/04 e/IPA0411 2FAF-C10R REV. B, 03/05
Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.

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